mendenmh wrote:The auto industry is quite conservative about adopting new electronics, because of reliability worries. IGBTs have a lot of history behind them, and are known to be nearly indestructible. SiC is a coming technology, and promises many good things. Since SiC is a large bandgap material, it can operate at very high temperatures without large leakage currents, which is a big plus for under-the-hood operation. However, I suspect we will have to wait a couple years until enough of them have been really torture tested before they go into automobiles. It also has to get very cheap, which Si IGBTs are.
Agreed. Also, there needs to be multiple sources and that is not yet in place for SiC power MOSFETs.
It may also be true that at the power levels of the LEAF inverter you would have to parallel so many SiC MOSFETs devices to get to the same on-state losses of the IGBT that you would then have as much or more switching loss than you had with the IGBT. I don't know exactly where that crossover would occur.
It does appear that SiC will play a bigger and bigger role in our daily lives as time goes on. I am starting to see them being designed in in other applications.